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MMM Meeting November 2007 Tampa
(link)
Session Title: GD-Interfacial Effects in Thin Magnetic Films
J-M. L. Beaujour
1, A. D. Kent
1,
J. Z. Sun
21 Department of Physics, New York
University, New York, USA,
2
IBM T. J. Watson Research Center, Yorktown Heights,
NY 10598, USA
- Abstract: Ferromagnetic resonance has been used to study the
magnetic properties and magnetization dynamics of polycrystalline Fe1-xVx
alloy films with 0 ≤ x < 0.7. Films were produced by co-sputtering from separate Fe and
V targets, leading to a composition gradient across a Si substrate. FMR studies
were conducted at room temperature with a broadband coplanar waveguide at
frequencies up to 50 GHz using the flip-chip method. The effective demagnetization
field 4pMeff and the Gilbert damping parameter G have been determined as a
function of V concentration. The results are compared to those of epitaxial FeV
fims.
MRS Fall Meeting November 2006 Boston - Material's
Research Society
(link)
Session EV02
J-M. L. Beaujour
1, W. Chen
1, G. de Loubens, A. D. Kent
1,
J. Z. Sun
21 Department of Physics, New York
University, New York, USA,
2
IBM T. J. Watson Research Center, Yorktown Heights,
NY 10598, USA
- Abstract: Magnetization dynamics in confined systems is a topic
of great current interest. It has recently become possible to study magnetic
excitations in individual nanomagnets using ferromagnetic resonance (FMR),
generated by a spin-torque (ST) interaction [1]. Here we report on a comparison
of conventional broadband FMR on extended thin films with ST FMR excitation of
the same films patterned down to 50 nm scale lateral dimensions using electron
beam lithography. Experiments are conducted on || [xCo - 2[x Ni] ×
Ν | 10nm Cu | 12 nm Co|| structures, where x is the thickness of
the Co layer. Varying x is shown to enable variation of the easy-plane
anisotropy. Samples with x = 0.1, 0.2, 0.3 and 0.4 nm have been studied,
where the number of bilayers is varied to keep the film thickness and total
magnetic moment constant (N =1.2/x, x in nm). The samples
were grown on Si-SiO2 substrate by evaporation in UHV. Field sweep
FMR measurements on extended films and nanopillar devices were conducted in a
broad frequency range in the GHz regime (1 to 20 GHz). FMR studies of the thin
films were carried out using a coplanar waveguide and the flip-chip method. The
resonance field Hres and the linewidth ΔH were studied as a function
of frequency for field-in plane and field perpendicular to the plane, and as a
function of the field angle at constant frequency. The 2nd and 4th
order perpendicular anisotropy constants were determined, as well as the
magnetic damping parameter, α. ST FMR studies were conducted in the field
perpendicular to the plane geometry. The frequency dependence of Hres
and ΔH for the nanopillars is compared to that of the extended films. [1] J. C.
Sankey et al., Phys. Rev. Lett. 96, 227601 (2006)
[PPT]
Magnetism and Magnetic Materials 2005 San Jose
(link)
Session EV02
J-M. L. Beaujour
1, W. Chen
1, A. D. Kent
1,
J. Z. Sun
21 Department of Physics, New York
University, New York, USA,
2
IBM T. J. Watson Research Center, Yorktown Heights,
NY 10598, USA
The Proceeding manuscript was accepted for publication in J. Appl. Phys.
- Abstract: We present room temperature ferromagnetic resonance (FMR) studies
of polycrystalline ||Pt/10 nm Cu/t Co/10 nm Cu/Pt||
films as a function of Co layer thickness (1 £
t £ 10 nm)
grown by evaporation and magnetron sputtering. FMR was studied
with a high frequency broadband coplanar waveguide (up to 25 GHz)
using a flip-chip method. The resonance field and the linewidth
were measured as a function of the ferromagnetic layer thickness.
The evaporated films exhibit a lower magnetization density
(Ms = 1131 emu/cm3) compared to the
sputtered films (Ms= 1333 emu/cm3), with
practically equal perpendicular surface anisotropy (Ks
~ -0.5 erg/cm2). For both series of films, a
strong increase of the linewidth was observed for Co layer
thickness below 3 nm. For films with a ferromagnetic layer thinner
than 4 nm, the damping of the sputtered films is larger than that
of the evaporated films. The thickness dependence of the linewidth
can be understood in term of the spin pumping effect, from which
the interface spin mixing conductance (g??
S-1) is deduced.
[PPT]
Condensed Matter Seminar (Colorado State
University) 2005 - Invited Talk
(link)
J-M. L. Beaujour, A. D. Kent
1
Department of Physics, New York University, New York, USA
[PPT]
APS March Meeting 2005 Los Angeles -
American Physical Society
(link)
Session B42: Focus Session: Magnetic Nanoparticles, Nanostructures &
Heterostructures I
Sponsoring Units: DMP GMAG
Chair: Axel Hoffmann, Argonne National Laboratory
LACC - 150B
J-M. L.
Beaujour, A. D. Kent
Department of Physics, New York University, New York, USA
- Abstract: Ferromagnetic resonance studies of polycrystalline Co
thin films and Pt/ Cu/Co/Cu/Pt layered structures have been carried out with Co
layer thickness varying from 1 to 70 nm. The resonance field and linewidth were
studied as a function of the ferromagnetic layer thickness at room temperature
and as a function of applied field. The films were grown by e-beam and thermal
evaporation in UHV using an in-situ wedge growth mechanism. The absorption line
was measured using a strip-coil by sweeping the in-plane field at fixed
frequency ranging from 5 GHz to 10 GHz. It was found that the width of the
absorption line, which has a Lorentzian shape, has a linear dependence on
frequency. The intrinsic Gilbert damping constant a was extracted from
the slope of the line. For both single films and layered structures,
a
decreases with decreasing Co thickness. In addition, the resonance field is
larger than expected based on the Kittel formula. We are presently performing
FMR studies of films where the thickness of the Co layer is well below 10 nm. A
broadband coplanar transmission line has been designed to work in the frequency
range of 5GHz to 20GHz to measure the complex susceptibility of ultrathin
magnetic films. In addition, the resonance frequency and the Gilbert damping
constant will be studied as a function of the Cu layer thickness and interface
nature (Co/Cu, Co/Pt, Co/Cu/Pt).
Presentation:
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